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 Silicon Germanium (SiGe) epi is a material technology that enables high-speed digital applications such as wireless telecommunications. Used in the formation of heterojunction bipolar transistors (HBT's), it allows higher frequencies and lower noise and power consumption. SiGe is produced on silicon wafers using standad silicon industry processes that offer lower cost than GaAs processes. This process has been shown to be very sensitive to oxygen and nitrogen impurities. Some SiGe epi growth processes are done at low temperatures < 1000C.
At these low growth temperatures, the risk of oxygen incorporation into the wafer is higher. Therefore, palladium hydrogen purifiers are used to eliminate the oxygen and carbon contamination that can be more prevalent at lower furnace temperatures. The higher flow rates for SiGe epi usually require the high-flow HP Series V-Purge purifier or catalytic purifiers for liquid hydrogen gas sources.
Typical Gases: Hydrogen, Nitrogen
Flow Rates: Hydrogen: 70-200 slpm Nitrogen: 5-50 slpm
Suggested Purifiers:
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