|
 Silicon carbide (SiC) is a material used for advanced semiconductor electronic device applications. SiC-based electronics and sensors can operate in hostile environments where conventional silicon-based electronics cannot function. Silicon carbide's ability to function in high temperature, high power, and high radiation conditions gives it a large advantage for a wide variety of systems and applications. The wide bandgap also allows silicon carbide devices to operate at shorter wavelengths, enabling the creation of blue light-emitting diodes (LEDs).
Nitrogen is a dopant impurity in the silicon carbide ingot and wafer processes, so HP Series palladium purifiers are required since it is the only method to remove oxygen, carbon and nitrogen impurities at the reactor point-of-use.
Argon is also used in the SiC growth process, so PureGuard heated getter purifiers are required to remove the nitrogen impurities that can reside in the crystal lattice, leading to significant deterioration of the electrical properties. Refer to the technical bulletin, "Improving SiC Crystal Purity and Electrical Properties with the use of Getter-purified argon gas" for further reading.
Typical Gases: Hydrogen, Nitrogen
Flow Rates: Hydrogen: 50-200 slpm Nitrogen: 5-50 slpm
Suggested Purifiers:
| 
